標題: | Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS |
作者: | Chin, Albert Chen, C. Yu, D. S. Kao, H. L. McAlister, S. P. Chi, C. C. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | compound semiconductor FETs;germanium-on-insulator;InGaAs MOSFET |
公開日期: | 1-八月-2006 |
摘要: | High mobility channel materials such as Ge and compound semiconductors (CS) show promise for future generation MOSFETs. The challenge is to integrate these materials with a Si substrate and create good interfaces in the devices. Here we show dislocation-free CSOI and Ge-on-insulator (GOI) devices with good characteristics. The InAlAs/InGaAs/InAlAs-OI on Si MESFETs shows a mobility of 8100 cm(2)/V s. To reduce the leakage current an Al2O3/InGaAs MOSFET was fabricated. Good 451 cm(2)/V S mobility was obtained, higher than the 340 cm(2)/V S of GOI MOSFETs. However the marginally better mobility than GOI and 18X lower mobility than MESFETs indicate that the soft phonon scattering, high-kappa interface scattering and process variations are challenges for CS MOSFETs. In contrast, the GOI CMOS provides a simpler process and significantly higher electron and hole mobilities than its Si counterparts. (C) 2006 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mssp.2006.08.066 http://hdl.handle.net/11536/11984 |
ISSN: | 1369-8001 |
DOI: | 10.1016/j.mssp.2006.08.066 |
期刊: | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING |
Volume: | 9 |
Issue: | 4-5 |
起始頁: | 711 |
結束頁: | 715 |
顯示於類別: | 會議論文 |