完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, JLen_US
dc.contributor.authorJan, CKen_US
dc.contributor.authorShye, DCen_US
dc.contributor.authorKuo, MWen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:25:52Z-
dc.date.available2014-12-08T15:25:52Z-
dc.date.issued2004en_US
dc.identifier.isbn1-56677-405-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18301-
dc.description.abstractThe novel annealing technologies, rapid thermal annealing (RTA) and excimer laser annealing (ELA) at low substrate temperature (300degreesC), were applied on the (Pb, Sr)TiO3 (PSrT) films. The PSrT film post treated by ELA only exhibits ferroelectric property and lager dielectric constant than as-deposited PSrT film. The PSrT film post treated by RTA only shows poor P-E curve and large leakage current. Interesting, the electrical properties of the PSrT film can be greatly enhanced by both of the ELA and the succeeding RTA treatments, so ferroelectric properties and dielectric constant can be reached as high as 15 muC/cm(2) of P-s and 574 of dielectric constant. In this work, excellent electrical properties of PSrT film post treated by both of ELA and succeeding RTA at low substrate temperature were systematically studied.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of (Pb, Sr)TiO3 films post treated by low temperature technologiesen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS IIen_US
dc.citation.volume2003en_US
dc.citation.issue22en_US
dc.citation.spage469en_US
dc.citation.epage478en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189482600043-
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