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dc.contributor.authorKo, CLen_US
dc.contributor.authorKuo, MCen_US
dc.contributor.authorHsu, CMen_US
dc.contributor.authorKuo, CNen_US
dc.date.accessioned2014-12-08T15:25:52Z-
dc.date.available2014-12-08T15:25:52Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8637-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18303-
dc.description.abstractA dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented. Because the system concepts of GSM and WCDMA are totally different from the standards, the chip uses low-IF and zero-IF receiver architecture for GSM and WCDMA, respectively. This chip consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end has been implemented in a standard 0.25um CMOs process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3dB, 36dB for the GSM900, 5.9dB, 31dB for the DCS1800, and ?-dB, 17.2dB for the WCDMA, respectively.en_US
dc.language.isoen_USen_US
dc.subjectcellularen_US
dc.subjectWCDMAen_US
dc.subjectGSMen_US
dc.subjectDCSen_US
dc.subjectCMOSen_US
dc.titleA CMOS dual-mode RF front-end receiver for GSM and WCDMAen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF 2004 IEEE ASIA-PACIFIC CONFERENCE ON ADVANCED SYSTEM INTEGRATED CIRCUITSen_US
dc.citation.spage374en_US
dc.citation.epage377en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000224435400079-
Appears in Collections:Conferences Paper