Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, MD | en_US |
dc.contributor.author | Nong, NV | en_US |
dc.contributor.author | Thuy, NP | en_US |
dc.contributor.author | Yao, YD | en_US |
dc.contributor.author | Lee, SF | en_US |
dc.contributor.author | Liou, Y | en_US |
dc.contributor.author | Chen, YY | en_US |
dc.contributor.author | Wang, CR | en_US |
dc.date.accessioned | 2014-12-08T15:25:53Z | - |
dc.date.available | 2014-12-08T15:25:53Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.isbn | 3-527-40577-1 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18327 | - |
dc.identifier.uri | http://dx.doi.org/10.1002/pssc.200405510 | en_US |
dc.description.abstract | Due to exhibiting giant field-induce strain, the Ni2MnGa shape memory alloys are great interest for both scientific researches and industry applications. The non-stoichiometric Ni50Mn25+xGa25-x alloys with x varied from 1.5, 2.5 to 4 have been fabricated by arc-melting. Martensitic transformation temperature for structure transformation from tetragonal to cubic (T-M) was observed from the magnetization, electrical resistivity and X-ray diffraction studies as functions of temperature below 400 K. We found that T-M increases roughly from 280 K to 310K with increasing x from 1.5 to 4. However, the Curie transition (T-M) is roughly at 380 K for all the samples, it is insensitive to the variation of Mn/Ga ratio. The electrical resistivity data exhibit a deep near T-M and a slope change near T-C. We have experimentally demonstrated that the shape memory effect can be occurred at room temperature with a proper concentration variation of Mn and Ga. (C) 2004 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Temperature dependence of magnetic properties in Ni-Mn-Ga shape memory alloys | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1002/pssc.200405510 | en_US |
dc.identifier.journal | SECOND SEEHEIM CONFERENCE ON MAGNETISM, PROCEEDINGS | en_US |
dc.citation.spage | 3579 | en_US |
dc.citation.epage | 3582 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000227060600079 | - |
Appears in Collections: | Conferences Paper |
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