A concurrent 0.18-mu m CMOS self-biased dual-band driver amplifier for IEEE 802.11 a/b/g

Abstract

A 2.4 GHz / 5.2 GHz self-biased dual band CMOS driver amplifier with a 9.8-dBm output power using TSMC 0.18-mu m IP6M standard CMOS process is described. The CMOS amplifier designed on Rogers R04003 printed-circuit-board (PCB) with a single input and a single output signal chain is simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications. Simulation results show that the driver amplifier exhibits an Output power about 9.7-dBm in both 2.4 GHz and 5.2 GHz, output interception point (OIP3) of 24dBm with power added efficiency (PAE) = 27% and PAE =24% in 2.4GHz and 5.2 GHz, respectively. The die size is 0.85x0.7 mm(2).