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dc.contributor.authorKuo, HCen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorLee, PTen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:25:55Z-
dc.date.available2014-12-08T15:25:55Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8627-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/18370-
dc.description.abstractHigh performance 1.27 mum InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than similar to30% when the temperature raised from room temperature to 70degreesC. High modulation bandwidth of 10.1 (8.8) GHz at 25degreesC (70degreesC) and bias current 6 mA are demonstrated.en_US
dc.language.isoen_USen_US
dc.titleHigh performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laseren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGESTen_US
dc.citation.spage97en_US
dc.citation.epage98en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224835600047-
Appears in Collections:Conferences Paper


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