| 標題: | High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser |
| 作者: | Kuo, HC Chang, YH Lai, FI Lee, PT Wang, SC 光電工程學系 Department of Photonics |
| 公開日期: | 2004 |
| 摘要: | High performance 1.27 mum InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than similar to30% when the temperature raised from room temperature to 70degreesC. High modulation bandwidth of 10.1 (8.8) GHz at 25degreesC (70degreesC) and bias current 6 mA are demonstrated. |
| URI: | http://hdl.handle.net/11536/18370 |
| ISBN: | 0-7803-8627-2 |
| 期刊: | 2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST |
| 起始頁: | 97 |
| 結束頁: | 98 |
| Appears in Collections: | Conferences Paper |
- MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission / Kuo, HC;Yao, HH;Chang, YH;Chang, YA;Tsai, MY
- MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser / Chang, YA;Chu, JT;Ko, CT;Kuo, HC;Lin, CF
- Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers / Kuo, HC;Chang, YH;Chang, YA;Lai, FI;Chu, JT
- High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength / Kuo, HC;Chang, YH;Yao, HH;Chang, YA;Lai, FI
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