Electromigration failure mechanism of Sn96.5Ag3.5 flip-chip solder bumps

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DC 欄位	值	語言
dc.contributor.author	Shao, TL	en_US
dc.contributor.author	Chen, IH	en_US
dc.contributor.author	Chen, C	en_US
dc.date.accessioned	2014-12-08T15:25:59Z	-
dc.date.available	2014-12-08T15:25:59Z	-
dc.date.issued	2004	en_US
dc.identifier.isbn	0-7803-8365-6	en_US
dc.identifier.issn	0569-5503	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18426	-
dc.description.abstract	The electromigration-induced failure of SnAg3.5 flip chip solder bumps was investigated at the current density of I x 10(4) A/cm(2) at 150 degreesC, and they failed after 22 hours of current stressing. Failure was found to be on anode/chip side, and large (Cu,Ni)(6)Sn-5 intermetallic compounds (IMCs) were observed on the interface of the UBM and the solder bump. A novel electromigration failure mechanism is proposed. Nickel atoms were migrated by electron flow from substrate side to chip side to form (Cu,Ni)(6)Sn-5 IMCs. The volume expansion due to the IMC formation may induce local high stress around the UBM and fail the contact of the anode/chip side.	en_US
dc.language.iso	en_US	en_US
dc.title	Electromigration failure mechanism of Sn96.5Ag3.5 flip-chip solder bumps	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS	en_US
dc.citation.spage	979	en_US
dc.citation.epage	982	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000224340900151	-
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