標題: Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology
作者: Hsu, YC
Shao, TL
Chen, C
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2002
摘要: Electromigration of SnAg3.8Cu0.7 Solder was investigated in flip chip solder bump. An under-bump metallization (UBM) of Cr/Cr-Cu/Cu tri-layer was deposited on the chip side and electroless Cu/Ni/Au pad was deposited on the BT board side. Electromigration damage was observed under the current density of 2 x 10(4) A/cm(2) at 100 degreesC. Voids were found at cathode side and crack was observed at solder/thin film UBM interface after current stressing, and the bump failed after 168-hour stressing. Copper atoms were found to move in the direction of electron flow. Intermetallic compounds of Cu-Sn an Ni-Cu-Sn were also observed to spread into the solder bump due to current stressing.
URI: http://hdl.handle.net/11536/18795
http://dx.doi.org/10.1109/EMAP.2002.1188852
ISBN: 0-7803-7682-X
DOI: 10.1109/EMAP.2002.1188852
期刊: PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON ELECTRONIC MATERIALS AND PACKAGING
起始頁: 287
結束頁: 290
顯示於類別:會議論文


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