Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology

標題:	Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology
作者:	Hsu, YC Shao, TL Chen, C 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	2002
摘要:	Electromigration of SnAg3.8Cu0.7 Solder was investigated in flip chip solder bump. An under-bump metallization (UBM) of Cr/Cr-Cu/Cu tri-layer was deposited on the chip side and electroless Cu/Ni/Au pad was deposited on the BT board side. Electromigration damage was observed under the current density of 2 x 10(4) A/cm(2) at 100 degreesC. Voids were found at cathode side and crack was observed at solder/thin film UBM interface after current stressing, and the bump failed after 168-hour stressing. Copper atoms were found to move in the direction of electron flow. Intermetallic compounds of Cu-Sn an Ni-Cu-Sn were also observed to spread into the solder bump due to current stressing.
URI:	http://hdl.handle.net/11536/18795 http://dx.doi.org/10.1109/EMAP.2002.1188852
ISBN:	0-7803-7682-X
DOI:	10.1109/EMAP.2002.1188852
期刊:	PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON ELECTRONIC MATERIALS AND PACKAGING
起始頁:	287
結束頁:	290
Appears in Collections:	Conferences Paper

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