Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology

doi:10.1109/EMAP.2002.1188852

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DC 欄位	值	語言
dc.contributor.author	Hsu, YC	en_US
dc.contributor.author	Shao, TL	en_US
dc.contributor.author	Chen, C	en_US
dc.date.accessioned	2014-12-08T15:26:28Z	-
dc.date.available	2014-12-08T15:26:28Z	-
dc.date.issued	2002	en_US
dc.identifier.isbn	0-7803-7682-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18795	-
dc.identifier.uri	http://dx.doi.org/10.1109/EMAP.2002.1188852	en_US
dc.description.abstract	Electromigration of SnAg3.8Cu0.7 Solder was investigated in flip chip solder bump. An under-bump metallization (UBM) of Cr/Cr-Cu/Cu tri-layer was deposited on the chip side and electroless Cu/Ni/Au pad was deposited on the BT board side. Electromigration damage was observed under the current density of 2 x 10(4) A/cm(2) at 100 degreesC. Voids were found at cathode side and crack was observed at solder/thin film UBM interface after current stressing, and the bump failed after 168-hour stressing. Copper atoms were found to move in the direction of electron flow. Intermetallic compounds of Cu-Sn an Ni-Cu-Sn were also observed to spread into the solder bump due to current stressing.	en_US
dc.language.iso	en_US	en_US
dc.title	Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/EMAP.2002.1188852	en_US
dc.identifier.journal	PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON ELECTRONIC MATERIALS AND PACKAGING	en_US
dc.citation.spage	287	en_US
dc.citation.epage	290	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000182081100048	-
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