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dc.contributor.authorChu, JTen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorKao, CCen_US
dc.contributor.authorHuang, HWen_US
dc.contributor.authorChu, CFen_US
dc.contributor.authorLin, CFen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:25:59Z-
dc.date.available2014-12-08T15:25:59Z-
dc.date.issued2004en_US
dc.identifier.isbn3-527-40570-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/18427-
dc.description.abstractThe fabrication process and performance characteristics of the laser lift-off (LLO) GaN light emitting diodes (LEDs) were investigated. The LLO-GaN LEDs with 300 x 300 mum(2) on Cu show a nearly 4-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current for the LLO-LEDs on Cu was also demonstrated. The large area-emission of 1000 x 1000 Pm 2 of p-side down GaN LLO-LEDs on Cu were fabricated. Further improvement of max light output are achieved. The LLO process should be applicable to other GaN-based light emitting devices in particular for those high light output power and high operation current devices. (C) 2004 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.en_US
dc.language.isoen_USen_US
dc.titleFabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-offen_US
dc.typeProceedings Paperen_US
dc.identifier.journal5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGSen_US
dc.citation.spage2413en_US
dc.citation.epage2416en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000225187100005-
Appears in Collections:Conferences Paper