完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chu, JT | en_US |
dc.contributor.author | Kuo, HC | en_US |
dc.contributor.author | Kao, CC | en_US |
dc.contributor.author | Huang, HW | en_US |
dc.contributor.author | Chu, CF | en_US |
dc.contributor.author | Lin, CF | en_US |
dc.contributor.author | Wang, SC | en_US |
dc.date.accessioned | 2014-12-08T15:25:59Z | - |
dc.date.available | 2014-12-08T15:25:59Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.isbn | 3-527-40570-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18427 | - |
dc.description.abstract | The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light emitting diodes (LEDs) were investigated. The LLO-GaN LEDs with 300 x 300 mum(2) on Cu show a nearly 4-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current for the LLO-LEDs on Cu was also demonstrated. The large area-emission of 1000 x 1000 Pm 2 of p-side down GaN LLO-LEDs on Cu were fabricated. Further improvement of max light output are achieved. The LLO process should be applicable to other GaN-based light emitting devices in particular for those high light output power and high operation current devices. (C) 2004 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | en_US |
dc.citation.spage | 2413 | en_US |
dc.citation.epage | 2416 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000225187100005 | - |
顯示於類別: | 會議論文 |