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dc.contributor.authorMAA, JJen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:03:17Z-
dc.date.available2014-12-08T15:03:17Z-
dc.date.issued1995-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.391208en_US
dc.identifier.urihttp://hdl.handle.net/11536/1842-
dc.description.abstractThe constant-field scaling theory (CONFIST) is evaluated in this work, The persistence of the drain-induced barrier lowering characteristics is selected to be essential condition of the CONFIST, Assessment on the accuracy of various constraint equations for MOS device miniaturization is carried out and the application limitations of these equations are studied in detail, The intrinsic incompleteness of the original CONFIST is then revealed by scaling the constraint equation, It is found that the restriction of requiring invariant Poisson equation after scaling in the original CONFIST must be released to prevent the scaling from being limited by the quasi-body effect, The original CONFIST is revised accordingly, and the modified version (CONFIST-2) shows that the application limit of the original CONFIST is about 0.5 mu m and the vertical dimensions must be scaled more than the lateral ones.en_US
dc.language.isoen_USen_US
dc.titleA NEW CONSTANT-FIELD SCALING THEORY FOR MOSFETSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.391208en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume42en_US
dc.citation.issue7en_US
dc.citation.spage1262en_US
dc.citation.epage1268en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RE53000010-
dc.citation.woscount4-
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