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dc.contributor.authorHuang, CHen_US
dc.contributor.authorYang, MYen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:26:09Z-
dc.date.available2014-12-08T15:26:09Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7695-1en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18542-
dc.description.abstractVery high capacitance density of 10 fF/mum(2) is measured using high-kappa AlTaOx, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.en_US
dc.language.isoen_USen_US
dc.titleHigh density RF MIM capacitors using high-kappa AlTaOx dielectricsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3en_US
dc.citation.spage507en_US
dc.citation.epage510en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184045100117-
Appears in Collections:Conferences Paper