1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorHuang, CHen_US
dc.contributor.authorLin, CYen_US
dc.contributor.authorLi, HYen_US
dc.contributor.authorChen, WJen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorMei, Pen_US
dc.date.accessioned2014-12-08T15:26:10Z-
dc.date.available2014-12-08T15:26:10Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7765-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/18559-
dc.identifier.urihttp://dx.doi.org/10.1109/VTSA.2003.1252550en_US
dc.description.abstractWe have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm(2)/V's in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm(2)/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/rectangle and small junction leakage currents of 3x10(-8) A/cm(2) and 2x10(-7) A/cm(2) for respective P+N and N+P junctions.en_US
dc.language.isoen_USen_US
dc.titleLa2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicideen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/VTSA.2003.1252550en_US
dc.identifier.journal2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage52en_US
dc.citation.epage55en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189391000015-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000189391000015.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...