La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide

doi:10.1109/VTSA.2003.1252550

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DC 欄位	值	語言
dc.contributor.author	Huang, CH	en_US
dc.contributor.author	Lin, CY	en_US
dc.contributor.author	Li, HY	en_US
dc.contributor.author	Chen, WJ	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Mei, P	en_US
dc.date.accessioned	2014-12-08T15:26:10Z	-
dc.date.available	2014-12-08T15:26:10Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7803-7765-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18559	-
dc.identifier.uri	http://dx.doi.org/10.1109/VTSA.2003.1252550	en_US
dc.description.abstract	We have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm(2)/V's in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm(2)/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/rectangle and small junction leakage currents of 3x10(-8) A/cm(2) and 2x10(-7) A/cm(2) for respective P+N and N+P junctions.	en_US
dc.language.iso	en_US	en_US
dc.title	La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VTSA.2003.1252550	en_US
dc.identifier.journal	2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.citation.spage	52	en_US
dc.citation.epage	55	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000189391000015	-
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