標題: Optimized noise and consistent RF model for 0.18 mu m MOSFETs
作者: Huang, CH
Li, HY
Chin, A
Liang, V
Chien, SC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: Strong dependence of finger number on minimum noise figure (NFmin) is observed in 0.18 mum MOSFETs. A lowest NFmin of 0.93 dB is measured at 5.8 GHz using 50 fingers but increases as either increasing or decreasing finger number. We have used a self-consistent S-parameter and NFmin model to analysis this abnormal finger number dependence, and the reason is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number.
URI: http://hdl.handle.net/11536/18560
http://dx.doi.org/10.1109/VTSA.2003.1252564
ISBN: 0-7803-7765-6
DOI: 10.1109/VTSA.2003.1252564
期刊: 2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 109
結束頁: 112
Appears in Collections:Conferences Paper


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