标题: | 0.13 mu m low voltage logic based RF CMOS technology with 115GHz f(T) and 80GHz f(MAX) |
作者: | Guo, JC Huang, CH Chan, KT Lien, WY Wu, CM Sun, YC 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 2003 |
摘要: | Superior RF CMOS of 115GHz f(T) and 80GHz f(max) has been realized by 0.13mum low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P,dB of near 10dBm can fit bluetooth requirement and 55% PAE at 2.4 GHz address the good potential of sub-100nm CMOS for low voltage RF power applications. |
URI: | http://hdl.handle.net/11536/18561 http://dx.doi.org/10.1109/EUMC.2003.177569 |
ISBN: | 1-58053-834-7 |
DOI: | 10.1109/EUMC.2003.177569 |
期刊: | 33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS |
起始页: | 683 |
结束页: | 686 |
显示于类别: | Conferences Paper |