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dc.contributor.authorChao, CWen_US
dc.contributor.authorWu, YCSen_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorHu, GRen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:26:17Z-
dc.date.available2014-12-08T15:26:17Z-
dc.date.issued2003en_US
dc.identifier.isbn1-56677-385-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18663-
dc.description.abstractCompared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films were usually deposited by the physical vapor deposition (PVD) method. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni induced lateral crystallization TFT were as good as those of PVD Ni induced lateral crystallization TFT.en_US
dc.language.isoen_USen_US
dc.titleLow temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Sien_US
dc.typeProceedings Paperen_US
dc.identifier.journalTHIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGSen_US
dc.citation.volume2002en_US
dc.citation.issue23en_US
dc.citation.spage137en_US
dc.citation.epage139en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000186760700015-
Appears in Collections:Conferences Paper