標題: The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon
作者: Lin, YD
Wu, YCS
Chao, CW
Hu, GR
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2003
摘要: The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon were investigated. It was found that oxygen in Ni deposited film had little effect on the growth rate of polycrystalline silicon. However, an incubation period was needed for nickel oxide to be reduced to nickel metal for the subsequent mediated crystallization process.
URI: http://hdl.handle.net/11536/18664
ISBN: 1-56677-385-7
期刊: THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS
Volume: 2002
Issue: 23
起始頁: 140
結束頁: 145
顯示於類別:會議論文