標題: | The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon |
作者: | Lin, YD Wu, YCS Chao, CW Hu, GR 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2003 |
摘要: | The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon were investigated. It was found that oxygen in Ni deposited film had little effect on the growth rate of polycrystalline silicon. However, an incubation period was needed for nickel oxide to be reduced to nickel metal for the subsequent mediated crystallization process. |
URI: | http://hdl.handle.net/11536/18664 |
ISBN: | 1-56677-385-7 |
期刊: | THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS |
Volume: | 2002 |
Issue: | 23 |
起始頁: | 140 |
結束頁: | 145 |
Appears in Collections: | Conferences Paper |