Electrical and reliability characteristics of 1nm ultrathin oxynitride gate dielectric prepared by RTP

Abstract

Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N-2/O-2 = 5/1 (slm) optimum mixed gas ambient These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.