Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs

標題:	Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
作者:	Huang, CH Yu, DS Chin, A Wu, CH Chen, WJ Zhu, CX Li, MF Cho, BJ Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2003
摘要:	We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
URI:	http://hdl.handle.net/11536/18687
ISBN:	0-7803-7872-5
期刊:	2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
起始頁:	319
結束頁:	322
Appears in Collections:	Conferences Paper