RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation

标题:	RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
作者:	Chin, A Chan, KT Huang, CH Chen, C Liang, V Chen, JK Chien, SC Sung, SW Duh, DS Lin, WJ Zhu, CX Li, MF McAlister, SP Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公开日期:	2003
摘要:	High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
URI:	http://hdl.handle.net/11536/18688
ISBN:	0-7803-7872-5
期刊:	2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
起始页:	375
结束页:	378
显示于类别：	Conferences Paper