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dc.contributor.authorChin, Aen_US
dc.contributor.authorChan, KTen_US
dc.contributor.authorHuang, CHen_US
dc.contributor.authorChen, Cen_US
dc.contributor.authorLiang, Ven_US
dc.contributor.authorChen, JKen_US
dc.contributor.authorChien, SCen_US
dc.contributor.authorSung, SWen_US
dc.contributor.authorDuh, DSen_US
dc.contributor.authorLin, WJen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorMcAlister, SPen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:26:18Z-
dc.date.available2014-12-08T15:26:18Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7872-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18688-
dc.description.abstractHigh quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.en_US
dc.language.isoen_USen_US
dc.titleRF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGESTen_US
dc.citation.spage375en_US
dc.citation.epage378en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189158800086-
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