A design of CMOS broadband amplifier with high-Q active inductor

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DC 欄位	值	語言
dc.contributor.author	Yang, JN	en_US
dc.contributor.author	Cheng, YC	en_US
dc.contributor.author	Lee, CY	en_US
dc.date.accessioned	2014-12-08T15:26:23Z	-
dc.date.available	2014-12-08T15:26:23Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7695-1944-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18728	-
dc.description.abstract	A CMOS broadband amplifier with high-Q active inductor using 0.25um CMOS process is presented In this broadband amplifier, the compact high-Q active inductor is connected to the common-gate configuration to improve the performance of the high power gain, wide bandwidth, low power consumption and simple matching characteristics. Not using any passive inductor components is to be reduced the area of chip and the complexity. Advance Design System (ADS) simulator has been performed to verify the performance of the designed broadband amplifier It has been shown that the amplifier has a 20dB(S21) power gain in -3dB bandwidth, S11 of -17dB, S22 of -21 dB and noise figure (NF) of 8dB, under 2.5 V power supply with 18mW power consumption.*	en_US
dc.language.iso	en_US	en_US
dc.title	A design of CMOS broadband amplifier with high-Q active inductor	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	3RD IEEE INTERNATIONAL WORKSHOP ON SYSTEM-ON-CHIP FOR REAL-TIME APPLICATIONS, PROCEEDINGS	en_US
dc.citation.spage	86	en_US
dc.citation.epage	89	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000184335100017	-
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