Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer

doi:10.1016/j.sse.2011.07.002

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lai, Ming-Hui	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:26:30Z	-
dc.date.available	2014-12-08T15:26:30Z	-
dc.date.issued	2011-10-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2011.07.002	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18815	-
dc.description.abstract	Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved. (C) 2011 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Metal-induced crystallization (MIC)	en_US
dc.subject	Thin film transistors (TFTs)	en_US
dc.subject	Chemical oxide	en_US
dc.subject	Leakage current	en_US
dc.subject	Poly-Si	en_US
dc.title	Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2011.07.002	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	64	en_US
dc.citation.issue	1	en_US
dc.citation.spage	6	en_US
dc.citation.epage	9	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000295251400002	-
dc.citation.woscount	0	-
Appears in Collections:	Articles

Files in This Item:

000295251400002.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.