Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer

標題:	Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
作者:	Lai, Ming-Hui Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	Metal-induced crystallization (MIC);Thin film transistors (TFTs);Chemical oxide;Leakage current;Poly-Si
公開日期:	1-十月-2011
摘要:	Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved. (C) 2011 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2011.07.002 http://hdl.handle.net/11536/18815
ISSN:	0038-1101
DOI:	10.1016/j.sse.2011.07.002
期刊:	SOLID-STATE ELECTRONICS
Volume:	64
Issue:	1
起始頁:	6
結束頁:	9
顯示於類別：	期刊論文

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