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dc.contributor.authorKer, MDen_US
dc.contributor.authorLo, WYen_US
dc.contributor.authorLee, CMen_US
dc.contributor.authorChen, CPen_US
dc.contributor.authorKao, HSen_US
dc.date.accessioned2014-12-08T15:26:31Z-
dc.date.available2014-12-08T15:26:31Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7239-5en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18828-
dc.description.abstractThis paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of ME By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-mum CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8kV under the HBM ESD test.en_US
dc.language.isoen_USen_US
dc.titleESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustnessen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3en_US
dc.citation.spage537en_US
dc.citation.epage540en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000178310900125-
Appears in Collections:Conferences Paper