標題: A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement
作者: Lue, HT
Tseng, TY
Huang, GW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2002
摘要: We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Omega-cm (normal) and 10 kOmega-cm (high-resistivity, HR) silicon substrates. at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.
URI: http://hdl.handle.net/11536/18852
ISBN: 0-7803-7464-9
期刊: ICMTS 2002:PROCEEDINGS OF THE 2002 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
起始頁: 101
結束頁: 106
顯示於類別:會議論文