標題: Design of negative charge pump circuit with polysilicon diodes in a 0.25-mu m CMOS process
作者: Ker, MD
Chang, CY
Jiang, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: polysilicon diode;charge pump circuit
公開日期: 2002
摘要: A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25-mum CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25-mum CMOS process with grounded p-type substrate.
URI: http://hdl.handle.net/11536/18900
ISBN: 0-7803-7363-4
期刊: 2002 IEEE ASIA-PACIFIC CONFERENCE ON ASIC PROCEEDINGS
起始頁: 145
結束頁: 148
Appears in Collections:Conferences Paper