标题: | Design of negative charge pump circuit with polysilicon diodes in a 0.25-mu m CMOS process |
作者: | Ker, MD Chang, CY Jiang, HC 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | polysilicon diode;charge pump circuit |
公开日期: | 2002 |
摘要: | A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25-mum CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25-mum CMOS process with grounded p-type substrate. |
URI: | http://hdl.handle.net/11536/18900 |
ISBN: | 0-7803-7363-4 |
期刊: | 2002 IEEE ASIA-PACIFIC CONFERENCE ON ASIC PROCEEDINGS |
起始页: | 145 |
结束页: | 148 |
显示于类别: | Conferences Paper |