完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, CY | en_US |
dc.contributor.author | Huang, HC | en_US |
dc.contributor.author | Lin, LJ | en_US |
dc.contributor.author | Huang, KH | en_US |
dc.date.accessioned | 2014-12-08T15:26:37Z | - |
dc.date.available | 2014-12-08T15:26:37Z | - |
dc.date.issued | 2002 | en_US |
dc.identifier.isbn | 0-7803-7448-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18907 | - |
dc.description.abstract | A new MOSFET circuit structure called the pseudo-BJT (PBJT) is proposed and analyzed in this work. This new structure mimics the function of the BJT, and it has advantages of smaller area and better process compatibility over the real BJT. The function of PBJT is verified to be similar to the real BJT via HSPICE simulation. Moreover, applications of the retinal smoothing network and the edge-extracting circuit using the PBJT structure are also demonstrated. The PBJT plays the role of the real BJT in both applications, and they are verified to be functionally correct via HSPICE simulations. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A new pseudo-bipolar-junction-transistor (PBJT) and its application in the design of retinal smoothing network | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL II, PROCEEDINGS | en_US |
dc.citation.spage | 125 | en_US |
dc.citation.epage | 128 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000186280700033 | - |
顯示於類別: | 會議論文 |