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dc.contributor.authorWu, CYen_US
dc.contributor.authorHuang, HCen_US
dc.contributor.authorLin, LJen_US
dc.contributor.authorHuang, KHen_US
dc.date.accessioned2014-12-08T15:26:37Z-
dc.date.available2014-12-08T15:26:37Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7448-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18907-
dc.description.abstractA new MOSFET circuit structure called the pseudo-BJT (PBJT) is proposed and analyzed in this work. This new structure mimics the function of the BJT, and it has advantages of smaller area and better process compatibility over the real BJT. The function of PBJT is verified to be similar to the real BJT via HSPICE simulation. Moreover, applications of the retinal smoothing network and the edge-extracting circuit using the PBJT structure are also demonstrated. The PBJT plays the role of the real BJT in both applications, and they are verified to be functionally correct via HSPICE simulations.en_US
dc.language.isoen_USen_US
dc.titleA new pseudo-bipolar-junction-transistor (PBJT) and its application in the design of retinal smoothing networken_US
dc.typeProceedings Paperen_US
dc.identifier.journal2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL II, PROCEEDINGSen_US
dc.citation.spage125en_US
dc.citation.epage128en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000186280700033-
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