Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, CY	en_US
dc.contributor.author	Su, JG	en_US
dc.contributor.author	Hsu, HM	en_US
dc.contributor.author	Wong, SC	en_US
dc.contributor.author	Huang, TY	en_US
dc.contributor.author	Sun, YC	en_US
dc.date.accessioned	2014-12-08T15:26:48Z	-
dc.date.available	2014-12-08T15:26:48Z	-
dc.date.issued	2001	en_US
dc.identifier.isbn	4-89114-012-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19056	-
dc.description.abstract	The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with a deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6V < Vgs = Vbs < 0.85V) and over-drive (Vgs = Vbs > 0.85V) modes. While Ft can be improved to 65GHz at 12.5mA with 1.5V Vds bias under normal-mode DTMOS operation, a high Ft of 220GHz with good linearity and stability is achieved under over-drive mode of operation.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	89	en_US
dc.citation.epage	90	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000173416600044	-
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