Extraction of noise source from noise parameters with RF CMOS devices

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kao, YH	en_US
dc.contributor.author	Hsu, MT	en_US
dc.contributor.author	Hsu, YM	en_US
dc.date.accessioned	2014-12-08T15:26:49Z	-
dc.date.available	2014-12-08T15:26:49Z	-
dc.date.issued	2001	en_US
dc.identifier.isbn	0-7803-7138-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19081	-
dc.description.abstract	The noise source extraction with two-port network of RF COMS devices is presented. We descried the correlation property with three different models. The correlation of noise source with the Y model and H model show the inductive characteristics, and the ABCD (transmission matrix) shows the capacitive characteristic. All the noise parameters are measured from 0.6G-6.0GHz.	en_US
dc.language.iso	en_US	en_US
dc.title	Extraction of noise source from noise parameters with RF CMOS devices	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS	en_US
dc.citation.spage	1326	en_US
dc.citation.epage	1329	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.identifier.wosnumber	WOS:000177768600320	-
顯示於類別：	會議論文