完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.contributor.author | Hsiao, Yuan-Wen | en_US |
dc.date.accessioned | 2014-12-08T15:03:22Z | - |
dc.date.available | 2014-12-08T15:03:22Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.isbn | 978-987-655-007-9 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1908 | - |
dc.description.abstract | The impacts of charged-device-model (CDM) electrostatic discharge (ESD) events on integrated circuit (IC,) products are presented in this paper. The mechanism of chip-level CDM ESD event is introduced with some case studies on CDM ESD damages. Besides the chip-level CDM ESD event, the board-level CDM ESD event, which had been reported to cause damages in many customer-returned ICs, is also investigated in this work The chip-level and board-level CDM ESD levels of several test devices and test circuits fabricated in CMOS processes are characterized and compared. The experimental results have shown that the board-level CDM ESD level of the test circuit is much lower than the chip-level CDM ESD level, which indicates that the board-level CDM ESD test is more critical than the chip-level CDM ESD test in the field applications. In addition, failure analysis reveals that the failure on the test circuit under board-level CDM ESD test is much severer than that under chip-level CDM ESD test. | en_US |
dc.language.iso | en_US | en_US |
dc.title | CDM ESD Protection in CMOS Integrated Circuits | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2008 ARGENTINE SCHOOL OF MICRO-NANOELECTRONICS, TECHNOLOGY AND APPLICATIONS | en_US |
dc.citation.spage | 61 | en_US |
dc.citation.epage | 66 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000263222700012 | - |
顯示於類別: | 會議論文 |