標題: | Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits |
作者: | Chen, Shih-Hung Ker, Ming-Dou 電機學院 College of Electrical and Computer Engineering |
公開日期: | 1-九月-2007 |
摘要: | CDM ESD event has become the main ESD reliability concern for integrated-circuits products using nanoscale CMOS technology. A novel CDM ESD protection design, using self-biased current trigger (SBCT) and source pumping, has been proposed and successfully verified in 0.13-mu m CMOS technology to achieve 1-kV CDM ESD robustness. (C) 2007 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.microrel.2007.07.095 http://hdl.handle.net/11536/4218 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2007.07.095 |
期刊: | MICROELECTRONICS RELIABILITY |
Volume: | 47 |
Issue: | 9-11 |
起始頁: | 1502 |
結束頁: | 1505 |
顯示於類別: | 會議論文 |