Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits

Abstract

CDM ESD event has become the main ESD reliability concern for integrated-circuits products using nanoscale CMOS technology. A novel CDM ESD protection design, using self-biased current trigger (SBCT) and source pumping, has been proposed and successfully verified in 0.13-mu m CMOS technology to achieve 1-kV CDM ESD robustness. (C) 2007 Elsevier Ltd. All rights reserved.