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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorHsiao, Yuan-Wenen_US
dc.date.accessioned2014-12-08T15:03:22Z-
dc.date.available2014-12-08T15:03:22Z-
dc.date.issued2008en_US
dc.identifier.isbn978-987-655-007-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/1908-
dc.description.abstractThe impacts of charged-device-model (CDM) electrostatic discharge (ESD) events on integrated circuit (IC,) products are presented in this paper. The mechanism of chip-level CDM ESD event is introduced with some case studies on CDM ESD damages. Besides the chip-level CDM ESD event, the board-level CDM ESD event, which had been reported to cause damages in many customer-returned ICs, is also investigated in this work The chip-level and board-level CDM ESD levels of several test devices and test circuits fabricated in CMOS processes are characterized and compared. The experimental results have shown that the board-level CDM ESD level of the test circuit is much lower than the chip-level CDM ESD level, which indicates that the board-level CDM ESD test is more critical than the chip-level CDM ESD test in the field applications. In addition, failure analysis reveals that the failure on the test circuit under board-level CDM ESD test is much severer than that under chip-level CDM ESD test.en_US
dc.language.isoen_USen_US
dc.titleCDM ESD Protection in CMOS Integrated Circuitsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 ARGENTINE SCHOOL OF MICRO-NANOELECTRONICS, TECHNOLOGY AND APPLICATIONSen_US
dc.citation.spage61en_US
dc.citation.epage66en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000263222700012-
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