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dc.contributor.authorKer, MDen_US
dc.contributor.authorPeng, JHen_US
dc.contributor.authorJiang, HCen_US
dc.date.accessioned2014-12-08T15:26:50Z-
dc.date.available2014-12-08T15:26:50Z-
dc.date.issued2001en_US
dc.identifier.isbn0-7803-7057-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/19095-
dc.description.abstractESD phenomenon has become a serious problem for IC products fabricated by deep-submicron CMOS technologies. To qualify the ESD immunity of IC products, there are some test methods and standards developed by some organizations, which are ESDA, AEC, EIA/JEDEC, and MIL-STD organizations. ESD events have been classified into 4 models, which are HBM, MM, CDM, and SDM. Besides, there are 4 modes of pin combinations for ESD zapping on the IC pins, which are specified as (1) Pin-to-VSS, (2) Pin-to-VDD, (3) Pin-to-Pin, and (4) VDD-to-VSS. All the test methods are designed to evaluate the ESD immunity of IC products. The zap number, zap interval, and sample size are all well defined in the related industrial standards. This paper provides an over-view among ESD test methods on IC products. In general, the commercial IC products are requested to sustain at least 2-kV HBM, 200-V MM, and 1-kV CDM ESD stresses.en_US
dc.language.isoen_USen_US
dc.titleESD test methods on integrated circuits: An overviewen_US
dc.typeProceedings Paperen_US
dc.identifier.journalICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGSen_US
dc.citation.spage1011en_US
dc.citation.epage1014en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176019100241-
Appears in Collections:Conferences Paper