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dc.contributor.authorTsai, HRen_US
dc.contributor.authorHsieh, TEen_US
dc.contributor.authorLo, SCen_US
dc.contributor.authorLin, HHen_US
dc.date.accessioned2014-12-08T15:26:52Z-
dc.date.available2014-12-08T15:26:52Z-
dc.date.issued2001en_US
dc.identifier.isbn0-7803-7215-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/19112-
dc.description.abstractThis work studies the fabrication of oxide patterns on titanium (Ti) thin films using scanning probe microscopy (SPM). We employed three different SPM techniques, namely, AFM in contact mode, lift mode incorporated with contact mode AFM, and STM. It was found that bias voltages.. scanning speed, scanning height of the probe (for lift mode), and setpoint current (for STM) play important roles in forming the attainable oxide features. Among these three methods, contact mode AFM exhibited the best patterning efficiency and stability and this method was adopted to oxidize the I-shaped Ti films. The resistance of I-shaped specimen after anoxidization raised from 10(4)Omega to 10(8)_10(9)Omega which evidenced the occurrence of oxidation in Ti.en_US
dc.language.isoen_USen_US
dc.titleA study of oxide patterning on titanium thin films using scanning probe microscopyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGYen_US
dc.citation.spage218en_US
dc.citation.epage222en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000173446400041-
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