完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, WJen_US
dc.contributor.authorFang, CYen_US
dc.contributor.authorWong, JSen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:26:54Z-
dc.date.available2014-12-08T15:26:54Z-
dc.date.issued2001en_US
dc.identifier.isbn1-56677-353-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/19127-
dc.description.abstractAlGaN Schottky contact characteristics after hybrid photo-enhanced wet etch and Inductively coupled plasma etch (ICP) is studied. AlGaN was grown by MOCVD on sapphire substrate. KOH solution and 100mW/cm(2) UV illumination by Hg are lamp was used for photo-enhanced wet etch. Gas mixture of Cl-2 and N-2 was used for ICP etch. The Schottky metal used in this study is Ni/Au (100nm/100nm) and the Ohmic metal used is Al (100nm). Typical etch rates are 0.28nm/min and 265nm/min with a roughness of 0.6nm and 1.17nm for wet and dry etch respectively. The ICP process etches more rapidly but the etched surfaces are rougher when compared to the wet-etch process. After ICP etch at 600 watt for 60sec, the schottky diode has an ideality factor n=2.6, and the barrier height phi(B)=0.65 eV However, for the ICP etched sample followed by photo-enhanced wet chemical etch for 30mins, the sample has an ideality factor n=0.99, and the barrier height phi(B)=0.86 eV, and the breakdown voltage is recovered from 4V to 7.5V The study indicates that the wet chemical etch can remove the damage caused by ICP etching. Overall, the hybrid dry/wet etch process is a high etch rate process and cause very low damages on the etched surface.en_US
dc.language.isoen_USen_US
dc.subjectAlGaNen_US
dc.subjectSchottkyen_US
dc.subjectbarrier heighten_US
dc.subjectideality factoren_US
dc.subjectbreakdown-voltageen_US
dc.titleAIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etchen_US
dc.typeProceedings Paperen_US
dc.identifier.journalSTATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXV)en_US
dc.citation.volume2001en_US
dc.citation.issue20en_US
dc.citation.spage124en_US
dc.citation.epage128en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000180622600017-
顯示於類別:會議論文