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dc.contributor.authorChang, LKen_US
dc.contributor.authorTsai, MYen_US
dc.date.accessioned2014-12-08T15:26:55Z-
dc.date.available2014-12-08T15:26:55Z-
dc.date.issued2001en_US
dc.identifier.isbn0-7803-6412-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/19158-
dc.description.abstractThis paper describes a single-chip intelligent power module (IPM) manufactured by utilizing a modified high voltage BCD process that integrates power devices, LIGBTs, and protection circuits on the SOI substrate. The smart integrated circuits provide automatic-lock-automatic-retrieve sensing and protection functions To give strong and fast protection ability against faults of over-on-state-voltage, over-current, and over-temperature, those are specially designed for power converter usage. When the gate voltage of LIGBT is high and the faulty event is sensed, the protection circuit pulls down the gate voltage to low and toggles LIGBT to off state immediately. However, each time the gate voltage returns to high, LIGBT is retrieved to the normal operating condition automatically. Therefore, the proposed IPM can operate superior in the converters with pulse-width-modulation (PWM) applications.en_US
dc.language.isoen_USen_US
dc.titleThe design of automatic-lock-automatic-retrieve single-chip IPM for converter systemsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage236en_US
dc.citation.epage239en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000169941100060-
Appears in Collections:Conferences Paper