HIGH-BARRIER PT/AL/N-INP DIODE

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DC Field	Value	Language
dc.contributor.author	HUANG, WC	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	LEE, CL	en_US
dc.date.accessioned	2014-12-08T15:03:22Z	-
dc.date.available	2014-12-08T15:03:22Z	-
dc.date.issued	1995-05-25	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:19950614	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1915	-
dc.description.abstract	A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface.	en_US
dc.language.iso	en_US	en_US
dc.subject	SCHOTTKY-BARRIER DIODES	en_US
dc.subject	INDIUM PHOSPHIDE	en_US
dc.title	HIGH-BARRIER PT/AL/N-INP DIODE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:19950614	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	11	en_US
dc.citation.spage	924	en_US
dc.citation.epage	925	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RC65600060	-
dc.citation.woscount	3	-
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