HIGH-BARRIER PT/AL/N-INP DIODE

標題:	HIGH-BARRIER PT/AL/N-INP DIODE
作者:	HUANG, WC LEI, TF LEE, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	SCHOTTKY-BARRIER DIODES;INDIUM PHOSPHIDE
公開日期:	25-May-1995
摘要:	A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface.
URI:	http://dx.doi.org/10.1049/el:19950614 http://hdl.handle.net/11536/1915
ISSN:	0013-5194
DOI:	10.1049/el:19950614
期刊:	ELECTRONICS LETTERS
Volume:	31
Issue:	11
起始頁:	924
結束頁:	925
Appears in Collections:	Articles

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