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dc.contributor.authorLiu, Shiu-Jenen_US
dc.contributor.authorSu, Shih-Haoen_US
dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorHsieh, Jang-Hsingen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:26:57Z-
dc.date.available2014-12-08T15:26:57Z-
dc.date.issued2011-09-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2011.06.129en_US
dc.identifier.urihttp://hdl.handle.net/11536/19182-
dc.description.abstractAmorphous thin films of InGaZnO(4) (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 degrees C and 150 degrees C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous transparent conducting oxideen_US
dc.subjectDiluted magnetic semiconductoren_US
dc.subjectIndium gallium zinc oxide filmsen_US
dc.subjectCr dopingen_US
dc.titleEffects of Cr doping on physical properties of amorphous In-Ga-Zn-O filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2011.06.129en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume257en_US
dc.citation.issue23en_US
dc.citation.spage10018en_US
dc.citation.epage10021en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000293883400054-
dc.citation.woscount2-
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