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dc.contributor.authorPan, CLen_US
dc.contributor.authorLiu, TAen_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorTani, Men_US
dc.date.accessioned2014-12-08T15:26:58Z-
dc.date.available2014-12-08T15:26:58Z-
dc.date.issued2000en_US
dc.identifier.isbn0-7803-5947-Xen_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11536/19199-
dc.language.isoen_USen_US
dc.titleMulti-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generationen_US
dc.typeProceedings Paperen_US
dc.identifier.journalLEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2en_US
dc.citation.spage179en_US
dc.citation.epage180en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000165806400090-
Appears in Collections:Conferences Paper