Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generation

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Pan, CL	en_US
dc.contributor.author	Liu, TA	en_US
dc.contributor.author	Lin, GR	en_US
dc.contributor.author	Tani, M	en_US
dc.date.accessioned	2014-12-08T15:26:58Z	-
dc.date.available	2014-12-08T15:26:58Z	-
dc.date.issued	2000	en_US
dc.identifier.isbn	0-7803-5947-X	en_US
dc.identifier.issn	1092-8081	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19199	-
dc.language.iso	en_US	en_US
dc.title	Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz Generation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2	en_US
dc.citation.spage	179	en_US
dc.citation.epage	180	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000165806400090	-
顯示於類別：	會議論文