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dc.contributor.authorShu, CKen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorHuang, HYen_US
dc.contributor.authorChen, HHen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLee, MCen_US
dc.date.accessioned2014-12-08T15:26:59Z-
dc.date.available2014-12-08T15:26:59Z-
dc.date.issued2000en_US
dc.identifier.isbn0-8194-3717-4en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/19213-
dc.identifier.urihttp://dx.doi.org/10.1117/12.392182en_US
dc.description.abstractThe long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.en_US
dc.language.isoen_USen_US
dc.subjectmetastableen_US
dc.subjectMg-doped GaNen_US
dc.subjectphotoluminescenceen_US
dc.titleMetastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxyen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.392182en_US
dc.identifier.journalOPTOELECTRONIC MATERIALS AND DEVICES IIen_US
dc.citation.volume4078en_US
dc.citation.spage521en_US
dc.citation.epage526en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000089915000059-
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